Self-organized pore formation and open-loop-control in semiconductor etching

Details Self-organized pore formation and open-loop-control in semiconductor etching Self-organized pore formation and open-loop-control in semiconductor etching

2006-08-23

arxiv.org/abs/cond-mat/0608513v1

CHAOS (AIP) 13 (1), 217-224 (2003)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.1497835

Electrochemical etching of semiconductors, apart from many technical applications, provides an interesting experimental setup for self-organized structure formation capable e.g. of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); the properties and interactions between CB's are described by a number of material- and chemistry- dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies. These morphologies cannot be influenced only by the current, by chemical, material and other etching conditions, but also by an open-loop control, triggering the time scale given by the oxide dissolution time. With this method, under conditions where only branching pores occur, the additional signal hinders side pore formation resulting in regular pores with modulated diameter.

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