Self-Organized Formation of Fractal and Regular Pores in Semiconductors

Details Self-Organized Formation of Fractal and Regular Pores in Semiconductors Self-Organized Formation of Fractal and Regular Pores in Semiconductors

2006-12-30

arxiv.org/abs/cond-mat/0701008v1

Lecture Notes in Computer Science and Engineering 32, 82-87 (2003)

Physics

Condensed Matter

Materials Science

6 pages, 10 figures (reduced resolution)

Scientific paper

Electrochemical etching of semiconductors, beside technical applications, provides an interesting experimental setup for self-organized structure formation capable of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); properties and interactions between CB's are described by a number of material- and chemistry- dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies.

Affiliated with

Also associated with

No associations

Rating

Self-Organized Formation of Fractal and Regular Pores in Semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Self-Organized Formation of Fractal and Regular Pores in Semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-Organized Formation of Fractal and Regular Pores in Semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-486029