Self-localization of holes in a lightly doped Mott insulator

Details Self-localization of holes in a lightly doped Mott insulator Self-localization of holes in a lightly doped Mott insulator

2004-02-12

arxiv.org/abs/cond-mat/0402327v2

Eur. Phys. J. B 47, 37-46 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

13 pages, 4 figures; additional experimental data are included in Fig. 3 and some comments are added in the text

Scientific paper

10.1140/epjb/e2005-00300-7

We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T$_c$ cuprates. Disorder and impurities only play a minor and assistant role here.

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