Self-directed growth of AlGaAs core-shell nanowires for visible light applications

Details Self-directed growth of AlGaAs core-shell nanowires for visible light applications Self-directed growth of AlGaAs core-shell nanowires for visible light applications

2007-10-02

arxiv.org/abs/0710.0518v1

Nano Lett.; (Letter); 2007; 7(9); 2584-2589

Physics

Condensed Matter

Materials Science

20 pages, 7 figures

Scientific paper

10.1021/nl070874k

Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during the growth as a consequence of the different Al and Ga adatom diffusion lengths.

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