Self-consistent calculations of phonon scattering rates in GaAs transistor structure with one-dimensional electron gas

Details Self-consistent calculations of phonon scattering rates in GaAs transistor structure with one-dimensional electron gas Self-consistent calculations of phonon scattering rates in GaAs transistor structure with one-dimensional electron gas

2006-04-07

arxiv.org/abs/cond-mat/0604200v1

Physica Status Solidi (b) 242 (15), R134-R136 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 2 figures

Scientific paper

Self-consistent calculations of acoustic and polar optical phonon scattering rates in GaAs quantum wire transistor structures were carried out with account of collisional broadening. The influence of the gate bias on the scattering rates was examined, too. It was shown that in order to treat the scattering rates rigorously it is important to search for electron energy levels by means of the self-consistent solution of Schrodinger and Poisson equations and to take into account the collisional broadening.

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