Self-aligned carbon nanotube transistors with charge transfer doping

Details Self-aligned carbon nanotube transistors with charge transfer doping Self-aligned carbon nanotube transistors with charge transfer doping

2005-11-02

arxiv.org/abs/cond-mat/0511039v1

Appl. Phys. Lett. 86 (2005) 123108

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.1888054

This letter reports a charge transfer p-doping scheme which utilizes one-electron oxidizing molecules to obtain stable, unipolar carbon nanotube transistors with a self-aligned gate structure. This doping scheme allows one to improve carrier injection, tune the threshold voltage Vth, and enhance the device performance in both the ON- and OFF- transistor states. Specifically, the nanotube transistor is converted from ambipolar to unipolar, the device drive current is increased by 2-3 orders of magnitude, the device OFF current is suppressed and an excellent Ion/Ioff ratio of six order of magnitude is obtained. The important role played by metal-nanotube contacts modification through charge transfer is demonstrated.

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