Selective epitaxial growth of graphene on SiC

Details Selective epitaxial growth of graphene on SiC Selective epitaxial growth of graphene on SiC

2008-06-25

arxiv.org/abs/0806.4056v2

Physics

Condensed Matter

Materials Science

comments: 3 pages, reference 3 replaced

Scientific paper

10.1063/1.2988645

We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate and, then, patterning it with e-beam lithography (EBL) and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ~1582 cm-1 in the AlN-free areas is used to validate the concept, it gives absolute evidence of the selective FLG growth.

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