Screening-Induced Transport at Finite Temperature in Bilayer Graphene

Details Screening-Induced Transport at Finite Temperature in Bilayer Graphene Screening-Induced Transport at Finite Temperature in Bilayer Graphene

2009-12-04

arxiv.org/abs/0912.0799v1

Phys. Rev. B81, 195409(2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

18 pages, 11 figures

Scientific paper

10.1103/PhysRevB.81.195409

We calculate the temperature-dependent charge carrier transport of bilayer graphene (BLG) impacted by Coulomb impurity scattering within the random phase approximation. We find the polarizability is equal to the density of states at zero momentum transfer and is enhanced by a factor $\log{4}$ at large momentum transfer for arbitrary temperature. The sharp cusp of static polarizability at $q=2k_F$, due to the strong backward scattering, would be smooth by the increasing temperatures. We also obtain the asymptotic behaviors of conductivity of BLG at low and high temperature, and find it turns from a two dimensional electron gas (2DEG) like linear temperature metallic behavior to a single layer graphene (SLG) like quadratic temperature insulating behavior as the temperature increases.

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