Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

Details Schottky barriers at metal-finite semiconducting carbon nanotube interfaces Schottky barriers at metal-finite semiconducting carbon nanotube interfaces

2003-12-20

arxiv.org/abs/cond-mat/0312546v1

Appl.Phys.Lett. 83, 2429 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.1613355

Electronic properties of metal-finite semiconducting carbon nanotube interfaces are studied as a function of the nanotube length using a self-consistent tight-binding theory. We find that the shape of the potential barrier depends on the long-range tail of the charge transfer, leading to an injection barrier thickness comparable to half of the nanotube length until the nanotube reaches the bulk limit. The conductance of the nanotube junction shows a transition from tunneling to thermally-activated transport with increasing nanotube length.

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