Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

Details Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing

2011-10-25

arxiv.org/abs/1110.5506v1

Applied Physics Letters 94, 191913, 2009

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3136849

The evolution of the Schottky barrier height (SBH) of Er silicide contacts to n-Si is investigated as a function of the annealing temperature. The SBH is found to drop substantially from 0.43 eV for the as-deposited sample to reach 0.28 eV, its lowest value, at 450 C. By x-ray diffraction, high resolution transmission electron microscopy, and x-ray photoelectron spectroscopy, the decrease in the SBH is shown to be associated with the progressive formation of crystalline ErSi2-x.

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