Scattering of Carriers by Charged Dislocations in Semiconductors

Details Scattering of Carriers by Charged Dislocations in Semiconductors Scattering of Carriers by Charged Dislocations in Semiconductors

2004-08-12

arxiv.org/abs/cond-mat/0408256v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

2 figures

Scientific paper

The scattering of carriers by charged dislocations in semiconductors is examined within the framework of the Boltzmann transport theory. The ratios of quantum and transport scattering times are evaluated after averaging over the anisotropy in the relaxation time. A new approximate expression for the carrier mobility is proposed and the value of the Hall scattering factor is computed. Change in the resistivity when the dislocations are tilted with respect to the plane of transport is determined. Finally an expression for the relaxation time is derived when the dislocations are located within the sample with a uniform angular distribution.

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