Scattering Mechanism in Modulation-Doped Shallow Two-Dimensional Electron Gases

Details Scattering Mechanism in Modulation-Doped Shallow Two-Dimensional Electron Gases Scattering Mechanism in Modulation-Doped Shallow Two-Dimensional Electron Gases

2009-08-14

arxiv.org/abs/0908.2104v2

Appl. Phys. Lett. 96, 162112 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures, modified version as accepted in APL

Scientific paper

10.1063/1.3402765

We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus density, mu \propto n^{alpha}, is extracted as a function of the 2DEG's depth. When shallower than 130 nm from the surface, the power-law exponent of the 2DEG, as well as the mobility, drops from alpha \simeq 1.65 (130 nm deep) to alpha \simeq 1.3 (60 nm deep). Our results for shallow 2DEGs are consistent with theoretical expectations for scattering by remote dopants, in contrast to the mobility-limiting background charged impurities of deeper heterostructures.

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