Scattering by flexural phonons in suspended graphene under back gate induced strain

Details Scattering by flexural phonons in suspended graphene under back gate induced strain Scattering by flexural phonons in suspended graphene under back gate induced strain

2010-08-15

arxiv.org/abs/1008.2523v1

Physics

Condensed Matter

Materials Science

4 pages, 3 figures, submitted to the proceedings of the E-MRS 2010 Spring Meeting

Scientific paper

We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch show a quadratic dispersion relation, which becomes linear at long wavelength when the sample is under tension due to the rotation symmetry breaking. In the non-strained case, scattering by flexural phonons is the main limitation to electron mobility. This picture changes drastically when strains above $\bar{u}=10^{-4} n(10^{12}\,\text{cm}^{-2})$ are considered. Here we study in particular the case of back gate induced strain, and apply our theoretical findings to recent experiments in suspended graphene.

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