Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping

Details Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping

2010-03-28

arxiv.org/abs/1003.5404v1

Nanotechnology 22, 295705 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1088/0957-4484/22/29/295705

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the dependence of graphene resistance on tip voltage shows a significant variation with tip position. SGM imaging reveals mesoscopic domains of electron-doped and hole-doped regions. Our measurements indicate a substantial spatial fluctuation (on the order of 10^12/cm^2) in the carrier density in graphene due to extrinsic local doping. Important sources for such doping found in our samples include metal contacts, edges of graphene, structural defects, and resist residues.

Affiliated with

Also associated with

No associations

Rating

Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-498841