Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors

Details Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field Effect Transistors

2009-12-09

arxiv.org/abs/0912.1827v1

IEEE Transactions on Electron Devices 57, pp. 491-495 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures. IEEE Transactions on Electron Devices (in press)

Scientific paper

10.1109/TED.2009.2037406

We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio.

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