"Scaling of an anomalous metal/insulator transition in a 2D system in silicon at zero magnetic field"

Details "Scaling of an anomalous metal/insulator transition in a 2D system in silicon at zero magnetic field" "Scaling of an anomalous metal/insulator transition in a 2D system in silicon at zero magnetic field"

1994-12-22

arxiv.org/abs/cond-mat/9412103v1

Physics

Condensed Matter

uuencoded compressed ps-file. To be published in PRB

Scientific paper

We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically found to scale with a single parameter, $T_0$, which approaches zero at some critical electron density, $n_c$, and increases as a power $T_0\propto|n_s-n_c|^\beta$ with $\beta=1.6\pm0.1$ both in metallic ($n_s>n_c$) and insulating ($n_s

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