Physics – Condensed Matter – Other Condensed Matter
Scientific paper
2005-10-03
Physics
Condensed Matter
Other Condensed Matter
3 pages, 5 figures
Scientific paper
The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel [1], [2]. In non self aligned structures the electric field behavior along the channel, for fixed applied voltages, is determined by the contacts positions. Anyway, in GaAs based HEMTs, the geometry of the device appears to be not determinant for the output current due to saturation effects. On the other hand, the GaN based technology still offers the possibility to enhance devices output current handling contacts distances. In this paper we will present Monte Carlo simulations results which show how a downscaling of the Source to Gate distance could improve the device performances inducing an higher potential barrier between source and gate.
Carlo Aldo Di
Russo Saverio
No associations
LandOfFree
Scaling issues for AlGaN/GaN HEMTs: performance optimization via devices geometry modelling does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Scaling issues for AlGaN/GaN HEMTs: performance optimization via devices geometry modelling, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scaling issues for AlGaN/GaN HEMTs: performance optimization via devices geometry modelling will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-134710