Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures

Details Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures

2005-04-11

arxiv.org/abs/cond-mat/0504235v3

Phys. Rev. 72, 195317 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.72.195317

The temperature driven flow lines of the Hall and dissipative magnetoconductance data (\sigma_{xy},\sigma_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (\sigma_{xy},\sigma_{xx}) point determines a complete flow line.

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