Scaling analysis of the magnetoresistance in Ga_{1-x}Mn_xAs

Details Scaling analysis of the magnetoresistance in Ga_{1-x}Mn_xAs Scaling analysis of the magnetoresistance in Ga_{1-x}Mn_xAs

2007-05-14

arxiv.org/abs/0705.2016v2

Phys. Rev. Lett. 102, 137203 (2009)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

We compare experimental resistivity data on Ga_{1-x}Mn_xAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. All characteristic features of the temperature dependence of the resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. In particular, we find that the magnetic field induced changes in resistance cannot be explained within a mean-field treatment of the magnetic state, and that accounting for thermal fluctuations is crucial for a quantitative analysis. Similarly, while the non-interacting scaling theory is in reasonable agreement with the data, we find clear evidence in favor of interaction effects at low temperatures.

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