Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces

Details Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces

2004-03-28

arxiv.org/abs/cond-mat/0403675v1

Phys.Rev.B 69, 161402(R) (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in Phys.Rev.B Rapid Communications. Color figures available in PRB online version

Scientific paper

10.1103/PhysRevB.69.161402

We present an atomistic self-consistent tight-binding study of the electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube channel length when the end of the nanotube wire is buried inside the electrodes. We show that the lineup of the nanotube band structure relative to the metal Fermi-level depends strongly on the metal work function but weakly on the details of the interface. We analyze the length-dependent transport characteristics, which predicts a transition from tunneling to thermally-activated transport with increasing nanotube channel length.

Affiliated with

Also associated with

No associations

Rating

Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Scaling analysis of Schottky barriers at metal-embedded semiconducting carbon nanotube interfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-381295