Saturation of the Anomalous Hall Effect in Critically Disordered Ultra-thin CNi3 Films

Details Saturation of the Anomalous Hall Effect in Critically Disordered Ultra-thin CNi3 Films Saturation of the Anomalous Hall Effect in Critically Disordered Ultra-thin CNi3 Films

2010-01-31

arxiv.org/abs/1002.0099v1

Phys. Rev. Lett. 104, 076806 (2010)

Physics

Condensed Matter

Strongly Correlated Electrons

6 pages, 4 figures, to appear in PRL

Scientific paper

10.1103/PhysRevLett.104.076806

We demonstrate that a distinct high-disorder anomalous Hall effect phase emerges at the correlated insulator threshold of ultra-thin, amorphous, ferromagnetic CNi3 films. In the weak localization regime, where the sheet conductance G >> e^2/h, the anomalous Hall resistance of the films increases with increasing disorder and the Hall conductance scales as Gxy ~ G^1.6. However, at sufficiently high disorder the system begins to enter the 2D correlated insulator regime, at which point the Hall resistance Rxy abruptly saturates and the scaling exponent becomes 2. Tunneling measurements show that the saturation behavior is commensurate with the emergence of the 2D Coulomb gap, suggesting that e-e interactions mediate the high-disorder phase.

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