Rotational stacking and its electronic effects on graphene films grown on 4H-SiC$(000\bar{1})$

Details Rotational stacking and its electronic effects on graphene films grown on 4H-SiC$(000\bar{1})$ Rotational stacking and its electronic effects on graphene films grown on 4H-SiC$(000\bar{1})$

2007-06-14

arxiv.org/abs/0706.2134v1

Physics

Condensed Matter

Materials Science

5 pages 4 figures

Scientific paper

We examine the stacking order of multilayer graphene grown on the SiC$(000\bar{1})$ surface using low-energy electron diffraction and surface X-ray diffraction. We show that the films contain a high density of rotational stacking faults caused by three types of rotated graphene: sheets rotated $30^\circ$ and $\pm 2.20^\circ$ relative to the SiC substrate. These angles are unique because they correspond to commensurate phases of layered graphene, both with itself and with the SiC substrate. {\it Ab intio} calculations show that these rotational phases electronically decouple adjacent graphene layers. The band structure from graphene at fault boundaries displays linear energy dispersion at the $K$-point (Dirac cones), nearly identical to that of a single graphene sheet.

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