Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

Details Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

2007-12-06

arxiv.org/abs/0712.0972v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

First time observation of electron resonant tunneling through InAs quantum dots

Scientific paper

Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77K or 300K, and this is the first time that resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emission process of quantum dots, which indicates the concomitant charging/discharging effect.

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