Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

Details Room-Temperature Electron Spin Transport in a Highly Doped Si Channel Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

2011-02-07

arxiv.org/abs/1102.1221v1

Applied Physics Express No.4 023002 (2011)

Physics

Condensed Matter

Materials Science

14 pages, 4 Figures

Scientific paper

We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO tunnel barrier. Spin current was generated using a nonlocal technique, and spin injection signals and Hanle-type spin precession were successfully detected at 300 K, thus proving spin injection with the elimination of spurious signals. The spin diffusion length and its lifetime at RT were estimated to be 0.6 \"im and 1.3 ns by the Hanle-type spin precession, respectively.

Affiliated with

Also associated with

No associations

Rating

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Room-Temperature Electron Spin Transport in a Highly Doped Si Channel, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Room-Temperature Electron Spin Transport in a Highly Doped Si Channel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-680468