Room temperature ballistic transport in InSb quantum well nanodevices

Details Room temperature ballistic transport in InSb quantum well nanodevices Room temperature ballistic transport in InSb quantum well nanodevices

2011-11-21

arxiv.org/abs/1111.4806v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10$^{6}$ A/cm$^{2}$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.

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