Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies

Details Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies Role of structure of C-terminated 4H-SiC(000) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies

2011-09-30

arxiv.org/abs/1109.6916v1

Physical Review B - 18 January 2012; 85: 045426-1-7

Physics

Condensed Matter

Materials Science

20 pages,11 figures

Scientific paper

10.1103/PhysRevB.85.045426

Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(000) face of a 4H-SiC substrate, are investigated using microscopic methods. Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(000) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600{\deg}C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face. At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp2 bonded configuration, liberating Si atoms in barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers. These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface

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