Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory

Details Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory

2007-07-04

arxiv.org/abs/0707.0563v1

Physics

Condensed Matter

Materials Science

13 pages, 3 figures

Scientific paper

Transition-metal oxides exhibiting a bistable resistance state are attractive for non-volatile memory applications. The relevance of oxygen vacancies (VO) for the resistance-change memory was investigated with x-ray fluorescence, infrared microscopy, and x-ray absorption spectroscopy using Cr-doped SrTiO3 as example. We propose that the microscopic origin of resistance switching in this class of materials is due to an oxygen-vacancy drift occurring in close proximity to one of the electrodes.

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