Role of interface in ferromagnetism of (Zn,Co)O films

Details Role of interface in ferromagnetism of (Zn,Co)O films Role of interface in ferromagnetism of (Zn,Co)O films

2011-07-26

arxiv.org/abs/1107.5188v1

physica status solidi (b) 248 (2011) 1596

Physics

Condensed Matter

Materials Science

12 pages, 7 figures, 20 references

Scientific paper

10.1002/pssb.201001142

We demonstrate that room temperature ferromagnetic response (RT FR) of ZnCoO films grown at low temperature by the Atomic layer Deposition (ALD) method is due to Co metal accumulations at the ZnCoO/substrate interface region. The accumulated experimental evi evidences allow us to reject several other explanations of this effect in our samples, despite the fact that some of them are likely to be responsible for the low temperature FM in this class of the material.

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