Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields

Details Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields

2003-01-03

arxiv.org/abs/cond-mat/0301027v2

Phys. Rev. B 67, 241309 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, Fig. 4 has been replaced from the previous version, minor changes in the text

Scientific paper

10.1103/PhysRevB.67.241309

We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g-factor and a non-linear spin-polarization with field.

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