Role of dislocations in scattering of charge carriers in mechanical polishing damaged layers of silicon wafers

Details Role of dislocations in scattering of charge carriers in mechanical polishing damaged layers of silicon wafers Role of dislocations in scattering of charge carriers in mechanical polishing damaged layers of silicon wafers

2010-08-16

arxiv.org/abs/1008.2676v1

Russian Microelectronics, Vol. 30, No. 1, 2001, pp. 40-42

Physics

Condensed Matter

Materials Science

A brief note

Scientific paper

10.1023/A:1009421825142

Physical processes resulting in the anomalous (cubic) dependence of the
small-angle IR scattering intensity from near-surface layers of mechanically
polished silicon and germanium wafers on the photoexcitation power were
revealed. It was shown that extended linear defects and dislocations in the
damaged region contribute predominantly to carrier scattering.

Affiliated with

Also associated with

No associations

Rating

Role of dislocations in scattering of charge carriers in mechanical polishing damaged layers of silicon wafers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Role of dislocations in scattering of charge carriers in mechanical polishing damaged layers of silicon wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Role of dislocations in scattering of charge carriers in mechanical polishing damaged layers of silicon wafers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-177910