Rise and fall of defect induced ferromagnetism in SiC single crystals

Details Rise and fall of defect induced ferromagnetism in SiC single crystals Rise and fall of defect induced ferromagnetism in SiC single crystals

2011-06-06

arxiv.org/abs/1106.0966v1

Appl. Phys. Lett. 98, 222508 (2011)

Physics

Condensed Matter

Materials Science

12 pages, 1 figure

Scientific paper

10.1063/1.3597629

6H-SiC (silicon carbide) single crystals containing VSi-VC divacancies are investigated with respect to magnetic and structural properties. We found that an initial increase of structural disorder leads to pronounced ferromagnetic properties at room temperature. Further introduction of disorder lowers the saturation magnetization and is accompanied with the onset of lattice amorphization. Close to the threshold of full amorphization, also divacancy clusters are formed and the saturation magnetization nearly drops to zero.

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