Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface

Details Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface Ripple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface

2010-05-28

arxiv.org/abs/1005.5231v1

Phys. Rev. B 82, 121309(R) (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.82.121309

We present a detailed scanning tunnelling microscopy study which describes the morphological transition from ripple to dome islands during the growth of Ge on the vicinal Si(1 1 10) surface . Our experimental results show that the shape evolution of Ge islands on this surface is markedly different from that on the flat Si(001) substrate and is accomplished by agglomeration and coalescence of several ripples. By combining first principle calculations with continuum elasticity theory, we provide an accurate explanation of our experimental observations.

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