Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials

Details Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials

2008-12-22

arxiv.org/abs/0812.4123v1

Physics

Condensed Matter

Materials Science

12 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.102.086403

As the concentration of intrinsic defects becomes sufficiently high in O-deficient ZnO, interactions between defects lead to a significant reduction in their formation energies. We show that the formation of both O-vacancies and Zn-interstitials becomes significantly enhanced by a strong attractive interaction between them, making these defects an important source of n-type conductivity in ZnO.

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