RF Performance Projections of Graphene FETs vs. Silicon MOSFETs

Details RF Performance Projections of Graphene FETs vs. Silicon MOSFETs RF Performance Projections of Graphene FETs vs. Silicon MOSFETs

2011-10-05

arxiv.org/abs/1110.0978v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 6 figures

Scientific paper

A comparison of high frequency performance between graphene field-effect-transistors (GFETs) and silicon MOSFETs is presented. A GFET model calibrated with extracted device parameters and a commercial 65 nm CMOS process model are used to extract the transit frequency fT for different transistor lengths and biasing conditions. Under the assumption that the GFET model is scalable, it is found that the GFET slightly lags behind CMOS in terms of speed despite of its higher mobility. This is contrary to the current belief that the higher mobility in GFETs would suffice to provide better performance than CMOS, and can be explained by the effect of a strongly nonlinear voltage-dependent gate capacitance. In addition, GFETs achieve their best performance only for narrow ranges of VDS and IDS which must be carefully considered for the design of biasing circuitry. The dependence of fT on the mobility {\mu} is studied and it is found that for our parameter set, GFETs require at least {\mu} =3000 cm2/Vs in order to achieve the same performance as 65nm silicon MOSFETs.

Affiliated with

Also associated with

No associations

Rating

RF Performance Projections of Graphene FETs vs. Silicon MOSFETs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with RF Performance Projections of Graphene FETs vs. Silicon MOSFETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF Performance Projections of Graphene FETs vs. Silicon MOSFETs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-325235