RF magnetron sputtering SiOx, ZnS, and Al2O3 films for capsulation of nanostructured porous silicon

Details RF magnetron sputtering SiOx, ZnS, and Al2O3 films for capsulation of nanostructured porous silicon RF magnetron sputtering SiOx, ZnS, and Al2O3 films for capsulation of nanostructured porous silicon

Nov 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001spie.4454..233m&link_type=abstract

Proc. SPIE Vol. 4454, p. 233-237, Materials for Infrared Detectors, Randolph E. Longshore; Ed.

Physics

Scientific paper

We were investigated photoemission properties of porous silicon
capsulated by thin films SiOx,ZnS,Al2O3. This films were deposited by RF
magnetron sputtering in argon-oxygen atmosphere and had crystalline
structure. Light-emission spectra such double structure in visible and
infra-red region were investigated.

Affiliated with

Also associated with

No associations

Rating

RF magnetron sputtering SiOx, ZnS, and Al2O3 films for capsulation of nanostructured porous silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with RF magnetron sputtering SiOx, ZnS, and Al2O3 films for capsulation of nanostructured porous silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and RF magnetron sputtering SiOx, ZnS, and Al2O3 films for capsulation of nanostructured porous silicon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1187359