Reversible Metal-Semiconductor Transition of ssDNA-Decorated Single-Walled Carbon Nanotubes

Details Reversible Metal-Semiconductor Transition of ssDNA-Decorated Single-Walled Carbon Nanotubes Reversible Metal-Semiconductor Transition of ssDNA-Decorated Single-Walled Carbon Nanotubes

2010-10-08

arxiv.org/abs/1010.1616v1

Nano Letters 9 [4], pp. 1345-1349 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

13 pages, 6 figures

Scientific paper

10.1021/nl8029948

A field effect transistor (FET) measurement of a SWNT shows a transition from a metallic one to a p-type semiconductor after helical wrapping of DNA. Water is found to be critical to activate this metal-semiconductor transition in the SWNT-ssDNA hybrid. Raman spectroscopy confirms the same change in electrical behavior. According to our ab initio calculations, a band gap can open up in a metallic SWNT with wrapped ssDNA in the presence of water molecules due to charge transfer.

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