Reverse Schottky-Asymmetry Spin Current Detectors

Details Reverse Schottky-Asymmetry Spin Current Detectors Reverse Schottky-Asymmetry Spin Current Detectors

2010-09-23

arxiv.org/abs/1009.4624v2

Appl. Phys. Lett. 97 162501 (2010)

Physics

Condensed Matter

Materials Science

minor edits, additional refs

Scientific paper

10.1063/1.3504659

By reversing the Schottky barrier-height asymmetry in hot-electron semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved: 1. Demonstration of >50% spin polarization in silicon, resulting from elimination of the ferromagnet/silicon interface on the transport channel detector contact, and 2. Evidence of spin transport at temperatures as high as 260K, enabled by an increase of detector Schottky barrier height.

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