Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]

Details Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532] Response to "Comment on `Performance of a spin-based insulated gate field effect transistor' [Appl. Phys. Lett. 88, 162503 (2006), cond-mat/0603260]" [cond-mat/0604532]

2006-07-18

arxiv.org/abs/cond-mat/0607432v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, no figures

Scientific paper

A recent e-print (cond-mat/0604532) presented a proposed Comment to Applied
Physics Letters on our publication Appl. Phys. Lett. 88, 162503 (2006),
cond-mat/0603260. Here is our Response. As the proposed Comment has now been
rejected by Applied Physics Letters, neither the Comment nor the Response will
be published in Applied Physics Letters in this form.

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