Resonant tunneling through ultrasmall quantum dots: zero-bias anomalies, magnetic field dependence, and boson-assisted transport

Details Resonant tunneling through ultrasmall quantum dots: zero-bias anomalies, magnetic field dependence, and boson-assisted transport Resonant tunneling through ultrasmall quantum dots: zero-bias anomalies, magnetic field dependence, and boson-assisted transport

1996-08-20

arxiv.org/abs/cond-mat/9608081v1

Phys. Rev. B 54, 16820 (1996)

Physics

Condensed Matter

27 pages, latex, 21 figures, submitted to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.54.16820

We study resonant tunneling through a single-level quantum dot in the presence of strong Coulomb repulsion beyond the perturbative regime. The level is either spin-degenerate or can be split by a magnetic field. We, furthermore, discuss the influence of a bosonic environment. Using a real-time diagrammatic formulation we calculate transition rates, the spectral density and the nonlinear $I-V$ characteristic. The spectral density shows a multiplet of Kondo peaks split by the transport voltage and the boson frequencies, and shifted by the magnetic field. This leads to zero-bias anomalies in the differential conductance, which agree well with recent experimental results for the electron transport through single-charge traps. Furthermore, we predict that the sign of the zero-bias anomaly depends on the level position relative to the Fermi level of the leads.

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