Resonant tunneling in GaAs/AlGaAs triple-barrier structures under uniform transverse magnetic field

Details Resonant tunneling in GaAs/AlGaAs triple-barrier structures under uniform transverse magnetic field Resonant tunneling in GaAs/AlGaAs triple-barrier structures under uniform transverse magnetic field

2000-03-23

arxiv.org/abs/cond-mat/0003373v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

pdf v1.2, 12 pages with 6 figures

Scientific paper

The effect of an in-plane magnetic field on resonant tunneling in a symmetric GaAs/AlYGa1-YAs triple-barrier resonant tunneling TBRT structure is presented. The splitting of the resonant lines (and hence the coupling energy vs. magnetic induction) for the ground and the first excited resonant doublet shifts up in energy by increasing the magnetic induction. Each of branches in the resonant dispersion relations shows a parabolic behavior with the location of the cyclotron orbit center. It is expected that, at very high fields, the interaction with confined phonons be enhanced, due to phonon coupling between electron states in the ground quasibound doublet.

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