Resonant thermal transport in semiconductor barrier structures

Details Resonant thermal transport in semiconductor barrier structures Resonant thermal transport in semiconductor barrier structures

2004-01-18

arxiv.org/abs/cond-mat/0401315v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages. 4 figure.s

Scientific paper

10.1103/PhysRevB.69.193305

I report that thermal single-barrier (TSB) and thermal double-barrier (TDB) structures (formed, for example, by inserting one or two regions of a few Ge monolayers in Si) provide both a suppression of the phonon transport as well as a resonant-thermal-transport effect. I show that high-frequency phonons can experience a traditional double-barrier resonant tunneling in the TDB structures while the formation of Fabry-Perot resonances (at lower frequencies) causes quantum oscillations in the temperature variation of both the TSB and TDB thermal conductances $\sigma_{\text{TSB}}$ and $\sigma_{\text{TDB}}$.

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