Resonant Rayleigh Scattering in Ordered and Intentionally Disordered Semiconductor Superlattices

Details Resonant Rayleigh Scattering in Ordered and Intentionally Disordered Semiconductor Superlattices Resonant Rayleigh Scattering in Ordered and Intentionally Disordered Semiconductor Superlattices

2007-01-25

arxiv.org/abs/cond-mat/0701621v1

Phys. Rev. B 76, 075349 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 3 figures. Submittes to Phys. Rev. B

Scientific paper

10.1103/PhysRevB.76.075349

We report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modify markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same direction allows the continuous tuning of the in plane exciton localization and to study the interplay between the in plane and vertical disorder.

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