Resonant intrinsic spin Hall effect in p-type GaAs quantum well structure

Details Resonant intrinsic spin Hall effect in p-type GaAs quantum well structure Resonant intrinsic spin Hall effect in p-type GaAs quantum well structure

2005-07-26

arxiv.org/abs/cond-mat/0507603v1

Phys. Rev. Lett 96, 086802 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.96.086802

We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments.

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