Resistivity due to low-symmetrical defects in metals

Details Resistivity due to low-symmetrical defects in metals Resistivity due to low-symmetrical defects in metals

1998-02-26

arxiv.org/abs/cond-mat/9802285v1

Physics

Condensed Matter

24 pages in REVTEX-preprint format, 10 Postscript figures. Phys. Rev. B, vol. 57 (1998), accepted for publication

Scientific paper

10.1103/PhysRevB.57.12719

The impurity resistivity, also known as the residual resistivity, is calculated ab initio using multiple-scattering theory. The mean-free path is calculated by solving the Boltzmann equation iteratively. The resistivity due to low-symmetrical defects, such as an impurity-vacancy pair, is calculated for the FCC host metals Al and Ag and the BCC transition metal V. Commonly, 1/f noise is attributed to the motion of such defects in a diffusion process.

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