Resistive switching in nanogap systems on SiO2 substrates

Details Resistive switching in nanogap systems on SiO2 substrates Resistive switching in nanogap systems on SiO2 substrates

2009-06-27

arxiv.org/abs/0906.5100v1

Small 5, 2910-2915, (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 7 figures

Scientific paper

10.1002/smll.200901100

Voltage-controlled resistive switching is demonstrated in various gap systems on SiO2 substrate. The nanosized gaps are made by different means using different materials including metal, semiconductor, and metallic nonmetal. The switching site is further reduced by using multi-walled carbon nanotubes and single-walled carbon nanotubes. The switching in all the gap systems shares the same characteristics. This independence of switching on the material compositions of the electrodes, accompanied by observable damage to the SiO2 substrate at the gap region, bespeaks the intrinsic switching from post-breakdown SiO2. It calls for caution when studying resistive switching in nanosystems on oxide substrates, since oxide breakdown extrinsic to the nanosystem can mimic resistive switching. Meanwhile, the high ON/OFF ratio (10E5), fast switching time (2 us, test limit), durable cycles demonstrated show promising memory properties. The intermediate states observed reveal the filamentary conduction nature.

Affiliated with

Also associated with

No associations

Rating

Resistive switching in nanogap systems on SiO2 substrates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Resistive switching in nanogap systems on SiO2 substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistive switching in nanogap systems on SiO2 substrates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-306440