Resistive relaxation in field-induced insulator-metal transition of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayer manganite single crystal

Details Resistive relaxation in field-induced insulator-metal transition of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayer manganite single crystal Resistive relaxation in field-induced insulator-metal transition of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayer manganite single crystal

2005-04-20

arxiv.org/abs/cond-mat/0504500v1

Physics

Condensed Matter

Strongly Correlated Electrons

6 pages,5 figures

Scientific paper

10.1103/PhysRevB.72.064412

We have investigated the resistive relaxation of a (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystal, in order to examine the slow dynamics of the field-induced insulator to metal transition of bilayered manganites. The temporal profiles observed in remanent resistance follow a stretched exponential function accompanied by a slow relaxation similar to that obtained in magnetization and magnetostriction data. We demonstrate that the remanent relaxation in magnetotransport has a close relationship with magnetic relaxation that can be understood in the framework of an effective medium approximation by assuming that the first order parameter is proportional to the second order one.

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