Resistance switching at the nanometre scale in amorphous carbon

Details Resistance switching at the nanometre scale in amorphous carbon Resistance switching at the nanometre scale in amorphous carbon

Jan 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011njph...13a3020s&link_type=abstract

New Journal of Physics, Volume 13, Issue 1, pp. 013020 (2011).

Physics

1

Scientific paper

The electrical transport and resistance switching mechanism in amorphous carbon (a-C) is investigated at the nanoscale. The electrical conduction in a-C thin films is shown to be captured well by a Poole-Frenkel transport model that involves nonisolated traps. Moreover, at high electric fields a field-induced threshold switching phenomenon is observed. The following resistance change is attributed to Joule heating and subsequent localized thermal annealing. We demonstrate that the mechanism is mostly due to clustering of the existing sp2 sites within the sp3 matrix. The electrical conduction behaviour, field-induced switching and Joule-heating-induced rearrangement of atomic order resulting in a resistance change are all reminiscent of conventional phase-change memory materials. This suggests the potential of a-C as a similar nonvolatile memory candidate material.

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