Resistance Quenching in Graphene Interconnects

Details Resistance Quenching in Graphene Interconnects Resistance Quenching in Graphene Interconnects

2008-05-03

arxiv.org/abs/0805.0334v1

Applied Physics Letters, 92, 202108 (2008)

Physics

Condensed Matter

Materials Science

Scientific paper

We investigated experimentally the high-temperature electrical resistance of graphene interconnects. The test structures were fabricated using the focused ion beam from the single and bi-layer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300 to 500K the resistance of the single- and bi-layer graphene interconnects drops down by 30% and 70%, respectively. The quenching and temperature dependence of the resistance were explained by the thermal generation of the electron-hole pairs and acoustic phonon scattering. The obtained results are important for the proposed applications of graphene as interconnects in integrated circuits.

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