Resistance noise in electrically biased bilayer graphene

Details Resistance noise in electrically biased bilayer graphene Resistance noise in electrically biased bilayer graphene

2008-12-16

arxiv.org/abs/0812.2974v1

PRL 102, 126805 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.102.126805

We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.

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