Remote hole-doping of Mott insulators on the nanometer scale

Details Remote hole-doping of Mott insulators on the nanometer scale Remote hole-doping of Mott insulators on the nanometer scale

2008-06-13

arxiv.org/abs/0806.2191v1

Phys. Rev. Lett. 102, 236401 (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking a polar discontinuity.

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